High-Q Silicon-Germanium On-Chip Ring Resonator in the Mid-Infrared

Rémi Armand (1) , Marko Perestjuk (1, 2) , Alberto Della Torre (1) , Milan Sinobad (1) , Arnan Mitchell (2) , Andreas Boes (2) , Jean-Michel Hartmann (3) , Jean-Marc Fedeli (3) , Vincent Reboud (3) , Christelle Monat (1) , Christian Grillet (1)

1 INL - Institut des Nanotechnologies de Lyon
2 RMIT University - Royal Melbourne Institute of Technology University
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We report a high-Q ring resonator in the mid-infrared in a silicon-germanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the operating wavelength around 4.18 µm.

Domaines: Optique / photonique

Rémi Armand, Marko Perestjuk, Alberto Della Torre, Milan Sinobad, Arnan Mitchell, et al.. High-Q Silicon-Germanium On-Chip Ring Resonator in the Mid-Infrared. CLEO: Science and Innovations, 2022, San Jose, United States. pp.SW5O.2, ⟨10.1364/CLEO_SI.2022.SW5O.2⟩. ⟨hal-03749997⟩