Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD

Amira Nabil (1) , Ahmed Shaker (1) , Mohamed Abouelatta (1) , Hani Ragai (1) , Christian Gontrand (2)

1 ASU - Ain Shams University
2 INL - DE - INL - Dispositifs Electroniques

Abstract In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented. The comparison is fully cover various types of TFETs, either from the structure geometry or the materials point of view, which proved a framework for TFET designs and simulations. For Sentaurus TCAD, a dynamic nonlocal BTBT model is used for all simulations as it is proved a good calibration for experimental data or full quantum data taken from the literature. The BTBT model’s parameters are determined for different material and hetero-junctions structures where they can be used directly for any design or structure calibration. For the Silvaco simulator, a nonlocal BTBT model is utilized for calibration and its parameters are also provided. The study offers quick parameters data to be used directly, utilizing various materials without being involved in calibration difficulties.

Domaines: Micro et nanotechnologies/Microélectronique

Amira Nabil, Ahmed Shaker, Mohamed Abouelatta, Hani Ragai, Christian Gontrand. Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD. Journal of Physics: Conference Series, 2020, 1710 (1), pp.012003. ⟨10.1088/1742-6596/1710/1/012003⟩. ⟨hal-03777591⟩