Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles - Institut des nanotechnologies de Lyon Accéder directement au contenu
Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2019

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Résumé

Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potential in response to stress or strain can be used to tune the band structure of the semiconductor, and hence its electronic properties. This coupling between piezoelectricity and semiconducting properties can be readily exploited for force or pressure sensing using nanowires, where the geometry and unclamped nature of nanowires render them particularly sensitive to small forces. At the same time, piezoelectricity is known to manifest more strongly in nanowires of certain semiconductors. Here, we report the design and fabrication of highly sensitive piezotronic pressure sensors based on GaAs nanowire ensemble sandwiched between two electrodes in a back-to-back diode configuration. We analyse the current–voltage characteristics of these nanowire-based devices in response to mechanical loading in light of the corresponding changes to the device band structure. We observe a high piezotronic sensitivity to pressure, of ~7800 meV MPa −1 . We attribute this high sensitivity to the nanowires being fully depleted due to the lack of doping, as well as due to geometrical pressure focusing and current funnelling through polar interfaces.
Fichier principal
Vignette du fichier
CALAHORRA_HUSMANN_BOURDELAIN_et_al_2019.pdf (1.6 Mo) Télécharger le fichier
Origine : Publication financée par une institution

Dates et versions

hal-03777587 , version 1 (14-09-2022)

Licence

Paternité

Identifiants

Citer

Yonatan Calahorra, Anke Husmann, Alice Bourdelain, Wonjong Kim, Jelena Vukajlovic-Plestina, et al.. Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles. Journal of Physics D: Applied Physics, 2019, 52 (29), pp.294002. ⟨10.1088/1361-6463/ab1386⟩. ⟨hal-03777587⟩
5 Consultations
11 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More